advance product information october 20, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com 6.5 watt ku band power amplifier tga2514- epu-fl primary applications ? ku band vsat transmitter ? point to point radio key features ? frequency range: 13 - 16 ghz ? 38 dbm nominal psat ? 24 db nominal gain ? 14 db nominal return loss ? 0.25-um phemt 3mi technology ? 10 lead flange package ? bias conditions: 8 v @ 2.6 a idq ? package dimension: 0.45 x 0.68 x 0.12 in. measured data bias conditions: vd = 8 v, idq = 2.6a 30 31 32 33 34 35 36 37 38 39 40 13 14 15 16 17 18 19 20 frequency (ghz) psat (dbm) product description the TGA2514-EPU-FL provides 24 db of gain and 6.5w of output power across 13-16 ghz. the TGA2514-EPU-FL is designed using triquints proven standard 0.25-m gate phemt production process. this device is ideally suited for vsat transmitter and point to point radio applications. the flange lead package has a high thermal conductivity copper alloy base. evaluation boards are available. -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 9 11131517192123 frequency (ghz) gain (db) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 return loss (db) gain input output tga2514-fl date code lot code
advance product information october 20, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 9 v 2/ v - negative supply voltage range -5v to C0.35v i + positive supply current 4 a 2/ | i g | gate supply current 113 ma p in input continuous wave power 30.3 dbm 2/ p d power dissipation 20.8 w 2/, 3/ t ch operating channel temperature 150 0 c4/ t m mounting temperature (30 seconds) 210 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is 1e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGA2514-EPU-FL
advance product information october 20, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table ii rf characterization table (t a = 25 q c, nominal) (vd = 8v, id = 2.6 a) symbol parameter test condition typical units gain small signal gain f = 13-16 ghz 24 db irl input return loss f = 13-16 ghz 14 db orl output return loss f = 13-16 ghz 14 db psat saturated power f = 13-16 ghz 38 dbm TGA2514-EPU-FL table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of package) vd = 8 v i d = 2.6 a (quiescent) pdiss = 20.8 w 150 3.9 1 e+6 note: package backside snpb soldered to carrier at 70 c baseplate temperature. at saturated output power, the dc power consumption is 28.8 w with 6.5 w rf power delivered to the load. power dissipated is 22.3 w and the temperature rise in the channel is 87 c. the baseplate temperature must be reduced to 63 c to remain below the 150 c maximum channel temperature.
advance product information october 20, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com bias conditions: vd = 8 v, idq = 2.6a measured fixture data 30 31 32 33 34 35 36 37 38 39 40 13 14 15 16 17 18 19 20 frequency (ghz) psat (dbm) TGA2514-EPU-FL -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 9 11131517192123 frequency (ghz) gain (db) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 return loss (db) gain input output
advance product information october 20, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com bias conditions: vd = 8 v, idq = 2.6a measured fixture data 30 32 34 36 38 40 9 10111213141516171819202122 pin (dbm) pout (dbm) 13.5ghz 14ghz 14.5ghz 15ghz 1.5 2 2.5 3 3.5 4 4.5 9 10111213141516171819202122 pin (dbm) id (a) 13.5ghz 14ghz 14.5ghz 15ghz 15 17 19 21 23 25 9 10111213141516171819202122 pin (dbm) power gain (db) 13.5ghz 14ghz 14.5ghz 15ghz TGA2514-EPU-FL
advance product information october 20, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. notes: 1. vd must remain below 9v to comply with maximum rating value. 2. the drain supply must be connected to both sides of the evaluation block. 3. the cooling fan must be powered at all times when the device is under bias. 4. connect fan supply red/black to +12v. it requires ~100ma. TGA2514-EPU-FL evaluation board drawing
advance product information october 20, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com assembly diagram note: vg can be biased from either pin 1 or pin 5 2,4,7 gnd vg rf in tga2514-fl 3 10 8 1 rf out vd 0.01 p f 1 p f 1 p f0.01 p f 6 vd 0.01 p f 10 : 10 : 5 vg TGA2514-EPU-FL gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 1 p f 0.01 p f 1 p f
advance product information october 20, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing TGA2514-EPU-FL TGA2514-EPU-FL note: all dimensions are in inches with 0.005 tolerance n/c
advance product information october 20, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com assembly of a TGA2514-EPU-FL surface mount package onto a motherboard 1. clean the motherboard or module with acetone. rinse with alcohol and di water. allow the circuit to fully dry. 2. to improve the thermal and rf performance, we recommend a heat sink attached to the bottom of the package and apply snpb or equivalent solder to the bottom of tga2514. 3. apply snpb or equivalent solder to each pin of tga2514 and to the backside of the package. 4 clean the assembly with alcohol. . ordering information part package style TGA2514-EPU-FL flange (package bolted down) gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA2514-EPU-FL
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